N-Channel Power MOSFET, 55V Drain-Source Voltage, 64A Continuous Drain Current, and 0.014 ohm maximum Drain-Source On-Resistance. This silicon Metal-oxide Semiconductor FET features a D2PAK package for surface mounting, a maximum power dissipation of 130W, and operates within a temperature range of -55°C to 175°C. Key electrical characteristics include a 20V Gate-to-Source Voltage, 1.97nF input capacitance, and fast switching times with a 12ns turn-on delay. This component is RoHS compliant and lead-free.
PackageD2PAK
Current Rating64A
MountingSurface Mount
Power3.8W
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Technical Specifications
International Rectifier IRFZ48NSPBF technical specifications.
General
| Package/Case | D2PAK |
| Continuous Drain Current (ID) | 64A |
| Current Rating | 64A |
| Drain to Source Voltage (Vdss) | 55V |
| Drain-source On Resistance-Max | 14MR |
| Dual Supply Voltage | 55V |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 4.83mm |
| Input Capacitance | 1.97nF |
| Lead Free | Lead Free |
| Length | 10.67mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 130W |
| Mount | Surface Mount |
| Nominal Vgs | 4V |
| Number of Elements | 1 |
| Power Dissipation | 3.8W |
| Reach SVHC Compliant | No |
| Reverse Recovery Time | 100ns |
| RoHS Compliant | Yes |
| Termination | SMD/SMT |
| Turn-Off Delay Time | 34ns |
| Turn-On Delay Time | 12ns |
| DC Rated Voltage | 55V |
| Width | 9.65mm |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRFZ48NSPBF Datasheet
Download the complete datasheet for International Rectifier IRFZ48NSPBF to view detailed technical specifications.
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