IRFZ48NSPBF

N-Channel Power MOSFET, 55V Drain-Source Voltage, 64A Continuous Drain Current, and 0.014 ohm maximum Drain-Source On-Resistance. This silicon Metal-oxide Semiconductor FET features a D2PAK package for surface mounting, a maximum power dissipation of 130W, and operates within a temperature range of -55°C to 175°C. Key electrical characteristics include a 20V Gate-to-Source Voltage, 1.97nF input capacitance, and fast switching times with a 12ns turn-on delay. This component is RoHS compliant and lead-free.