N-Channel Power MOSFET featuring a 55V drain-source voltage rating and a maximum on-resistance of 14mΩ. This silicon, metal-oxide semiconductor FET offers a continuous drain current capability of 64A. Designed with a single element and housed in a D2PAK-3 plastic package, it is lead-free and RoHS compliant.
International Rectifier IRFZ48NSTRLPBF technical specifications.
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