N-Channel Power MOSFET, D2PAK package, featuring a 55V drain-source breakdown voltage and 64A continuous drain current. Offers a low 14mΩ Rds On resistance and 140W power dissipation. Designed for surface mounting with a tape and reel package, this silicon metal-oxide semiconductor FET operates from -55°C to 175°C and is lead-free and RoHS compliant. Key switching characteristics include a 12ns turn-on delay and 50ns fall time.
PackageD2PAK
Current Rating64A
MountingSurface Mount
PolarityN-CHANNEL
Quick Jump:
Technical Specifications
International Rectifier IRFZ48NSTRRPBF technical specifications.
General
| Package/Case | D2PAK |
| Continuous Drain Current (ID) | 64A |
| Current Rating | 64A |
| Drain to Source Breakdown Voltage | 55V |
| Drain to Source Voltage (Vdss) | 55V |
| Fall Time | 50ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 1.97nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 3.8W |
| Mount | Surface Mount |
| Package Quantity | 800 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 140W |
| Radiation Hardening | No |
| Rds On Max | 14mR |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Turn-Off Delay Time | 34ns |
| Turn-On Delay Time | 12ns |
| DC Rated Voltage | 55V |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRFZ48NSTRRPBF Datasheet
Download the complete datasheet for International Rectifier IRFZ48NSTRRPBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
