N-channel power MOSFET featuring 55V drain-source breakdown voltage and 61A continuous drain current. Offers a low 11mΩ maximum drain-source on-resistance. Designed for through-hole mounting in a TO-220AB package, this silicon metal-oxide semiconductor FET operates from -55°C to 175°C with a maximum power dissipation of 91W. Includes lead-free and RoHS compliant construction.
PackageTO-220AB
Current Rating61A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
International Rectifier IRFZ48ZPBF technical specifications.
General
| Package/Case | TO-220AB |
| Continuous Drain Current (ID) | 61A |
| Current Rating | 61A |
| Drain to Source Breakdown Voltage | 55V |
| Drain to Source Voltage (Vdss) | 55V |
| Drain-source On Resistance-Max | 11MR |
| Dual Supply Voltage | 55V |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 8.77mm |
| Input Capacitance | 1.72nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 91W |
| Mount | Through Hole |
| Nominal Vgs | 4V |
| On-State Resistance | 11R |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Polarization | N |
| Power Dissipation | 91W |
| Rds On Max | 11mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Turn-Off Delay Time | 35ns |
| Turn-On Delay Time | 15ns |
| DC Rated Voltage | 55V |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRFZ48ZPBF Datasheet
Download the complete datasheet for International Rectifier IRFZ48ZPBF to view detailed technical specifications.
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