
N-channel Insulated Gate Bipolar Transistor (IGBT) with a maximum collector current of 8.5A and a collector-emitter breakdown voltage of 600V. Features a low collector-emitter saturation voltage of 2.6V and a maximum power dissipation of 38W. This through-hole component is housed in a TO-220AB package, offering a wide operating temperature range from -55°C to 150°C. Designed with lead-free and RoHS compliant packaging, it includes fast switching characteristics with turn-on delay time of 40ns and turn-off delay time of 87ns.
International Rectifier IRG4BC10UDPBF technical specifications.
| Package/Case | TO-220AB |
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Saturation Voltage | 600V |
| Collector Emitter Voltage (VCEO) | 600V |
| Collector-emitter Voltage-Max | 2.6V |
| Current Rating | 8.5A |
| Height | 15.24mm |
| Input Type | STANDARD |
| Lead Free | Lead Free |
| Length | 10.54mm |
| Max Collector Current | 8.5A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 38W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Reverse Recovery Time | 28ns |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 87ns |
| Turn-On Delay Time | 40ns |
| DC Rated Voltage | 600V |
| Width | 4.69mm |
| RoHS | Compliant |
Download the complete datasheet for International Rectifier IRG4BC10UDPBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
