N-channel Insulated Gate Bipolar Transistor (IGBT) with a maximum collector current of 8.5A and a collector-emitter breakdown voltage of 600V. Features a low collector-emitter saturation voltage of 2.6V and a maximum power dissipation of 38W. This through-hole component is housed in a TO-220AB package, offering a wide operating temperature range from -55°C to 150°C. Designed with lead-free and RoHS compliant packaging, it includes fast switching characteristics with turn-on delay time of 40ns and turn-off delay time of 87ns.
PackageTO-220AB
Current Rating8.5A
MountingThrough Hole
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Technical Specifications
International Rectifier IRG4BC10UDPBF technical specifications.
General
Package/Case
TO-220AB
Collector Emitter Breakdown Voltage
600V
Collector Emitter Saturation Voltage
600V
Collector Emitter Voltage (VCEO)
600V
Collector-emitter Voltage-Max
2.6V
Current Rating
8.5A
Height
15.24mm
Input Type
STANDARD
Lead Free
Lead Free
Length
10.54mm
Max Collector Current
8.5A
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
38W
Mount
Through Hole
Package Quantity
50
Packaging
Rail/Tube
Radiation Hardening
No
Reach SVHC Compliant
No
Reverse Recovery Time
28ns
RoHS Compliant
Yes
Turn-Off Delay Time
87ns
Turn-On Delay Time
40ns
DC Rated Voltage
600V
Width
4.69mm
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRG4BC10UDPBF Datasheet
Download the complete datasheet for International Rectifier IRG4BC10UDPBF to view detailed technical specifications.
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