N-Channel Insulated Gate Bipolar Transistor (IGBT) featuring a 600V Collector Emitter Breakdown Voltage and a 14A continuous collector current. This through-hole component offers a low Collector Emitter Saturation Voltage of 2.56V and a maximum power dissipation of 49W. Packaged in a TO-262 plastic package, it operates within a temperature range of -55°C to 150°C and is RoHS compliant. Key switching characteristics include a 17ns turn-on delay and a 160ns turn-off delay.
PackageTO-262
Current Rating14A
MountingThrough Hole
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Technical Specifications
International Rectifier IRG4BC15UD-LPBF technical specifications.
General
Package/Case
TO-262
Collector Emitter Breakdown Voltage
600V
Collector Emitter Saturation Voltage
2.56V
Collector Emitter Voltage (VCEO)
600V
Collector-emitter Voltage-Max
2.4V
Current Rating
14A
Height
11.3mm
Input Type
STANDARD
Lead Free
Lead Free
Length
10.67mm
Max Collector Current
14A
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
49W
Mount
Through Hole
Package Quantity
50
Packaging
Rail/Tube
Reach SVHC Compliant
No
Reverse Recovery Time
28ns
RoHS Compliant
Yes
Turn-Off Delay Time
160ns
Turn-On Delay Time
17ns
DC Rated Voltage
600V
Width
4.83mm
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRG4BC15UD-LPBF Datasheet
Download the complete datasheet for International Rectifier IRG4BC15UD-LPBF to view detailed technical specifications.
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