N-channel Insulated Gate Bipolar Transistor (IGBT) with a 600V Collector-Emitter Breakdown Voltage and 16A Max Collector Current. Features a 1.66V Collector-Emitter Saturation Voltage and 24ns Turn-On Delay Time. Packaged in a TO-220AB through-hole mount with a maximum power dissipation of 60W. Operates from -55°C to 150°C and is RoHS compliant.
PackageTO-220AB
Current Rating16A
MountingThrough Hole
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Technical Specifications
International Rectifier IRG4BC20FPBF technical specifications.
General
| Package/Case | TO-220AB |
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Saturation Voltage | 1.66V |
| Collector Emitter Voltage (VCEO) | 600V |
| Collector-emitter Voltage-Max | 2V |
| Current Rating | 16A |
| Height | 15.24mm |
| Input Type | STANDARD |
| Lead Free | Lead Free |
| Length | 10.54mm |
| Max Collector Current | 16A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 60W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 190ns |
| Turn-On Delay Time | 24ns |
| DC Rated Voltage | 600V |
| Width | 4.69mm |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRG4BC20FPBF Datasheet
Download the complete datasheet for International Rectifier IRG4BC20FPBF to view detailed technical specifications.
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