N-channel Insulated Gate Bipolar Transistor (IGBT) with a 600V Collector-Emitter Breakdown Voltage and 16A Max Collector Current. Features a 1.66V Collector-Emitter Saturation Voltage and 24ns Turn-On Delay Time. Packaged in a TO-220AB through-hole mount with a maximum power dissipation of 60W. Operates from -55°C to 150°C and is RoHS compliant.
PackageTO-220AB
Current Rating16A
MountingThrough Hole
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Technical Specifications
International Rectifier IRG4BC20FPBF technical specifications.
General
Package/Case
TO-220AB
Collector Emitter Breakdown Voltage
600V
Collector Emitter Saturation Voltage
1.66V
Collector Emitter Voltage (VCEO)
600V
Collector-emitter Voltage-Max
2V
Current Rating
16A
Height
15.24mm
Input Type
STANDARD
Lead Free
Lead Free
Length
10.54mm
Max Collector Current
16A
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
60W
Mount
Through Hole
Package Quantity
50
Packaging
Rail/Tube
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Turn-Off Delay Time
190ns
Turn-On Delay Time
24ns
DC Rated Voltage
600V
Width
4.69mm
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRG4BC20FPBF Datasheet
Download the complete datasheet for International Rectifier IRG4BC20FPBF to view detailed technical specifications.
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