N-channel Insulated Gate Bipolar Transistor (IGBT) featuring a 600V Collector-Emitter Breakdown Voltage and a 19A continuous Collector Current. This through-hole component is housed in a TO-220AB package, offering a maximum power dissipation of 60W and operating temperature range from -55°C to 150°C. Key switching characteristics include a 62ns turn-on delay and a 1040ns turn-off delay, with a 37ns reverse recovery time. The device is RoHS compliant and lead-free.
PackageTO-220AB
Current Rating19A
MountingThrough Hole
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Technical Specifications
International Rectifier IRG4BC20SDPBF technical specifications.
General
| Package/Case | TO-220AB |
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Voltage (VCEO) | 1.6V |
| Collector-emitter Voltage-Max | 1.6V |
| Current Rating | 19A |
| Height | 8.77mm |
| Input Type | STANDARD |
| Lead Free | Lead Free |
| Length | 10.54mm |
| Max Collector Current | 19A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 60W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Reverse Recovery Time | 37ns |
| RoHS Compliant | Yes |
| Termination | Through Hole |
| Turn-Off Delay Time | 1040ns |
| Turn-On Delay Time | 62ns |
| DC Rated Voltage | 600V |
| Width | 4.69mm |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRG4BC20SDPBF Datasheet
Download the complete datasheet for International Rectifier IRG4BC20SDPBF to view detailed technical specifications.
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