N-channel Insulated Gate Bipolar Transistor (IGBT) featuring a 600V Collector-Emitter Breakdown Voltage and a 19A continuous Collector Current. This through-hole component is housed in a TO-220AB package, offering a maximum power dissipation of 60W and operating temperature range from -55°C to 150°C. Key switching characteristics include a 62ns turn-on delay and a 1040ns turn-off delay, with a 37ns reverse recovery time. The device is RoHS compliant and lead-free.
PackageTO-220AB
Current Rating19A
MountingThrough Hole
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Technical Specifications
International Rectifier IRG4BC20SDPBF technical specifications.
General
Package/Case
TO-220AB
Collector Emitter Breakdown Voltage
600V
Collector Emitter Voltage (VCEO)
1.6V
Collector-emitter Voltage-Max
1.6V
Current Rating
19A
Height
8.77mm
Input Type
STANDARD
Lead Free
Lead Free
Length
10.54mm
Max Collector Current
19A
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
60W
Mount
Through Hole
Package Quantity
50
Packaging
Rail/Tube
Radiation Hardening
No
Reach SVHC Compliant
No
Reverse Recovery Time
37ns
RoHS Compliant
Yes
Termination
Through Hole
Turn-Off Delay Time
1040ns
Turn-On Delay Time
62ns
DC Rated Voltage
600V
Width
4.69mm
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRG4BC20SDPBF Datasheet
Download the complete datasheet for International Rectifier IRG4BC20SDPBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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