N-Channel Insulated Gate Bipolar Transistor (IGBT) with a 600V Collector Emitter Breakdown Voltage and 19A continuous collector current. Features a low 1.4V Collector Emitter Saturation Voltage and 60W maximum power dissipation. Designed for through-hole mounting in a TO-220AB package, this RoHS compliant component offers fast switching with a 27ns turn-on delay and 540ns turn-off delay. Operates across a wide temperature range from -55°C to 150°C.
PackageTO-220AB
Current Rating19A
MountingThrough Hole
Power60W
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Technical Specifications
International Rectifier IRG4BC20SPBF technical specifications.
General
Package/Case
TO-220AB
Collector Emitter Breakdown Voltage
600V
Collector Emitter Saturation Voltage
1.4V
Collector Emitter Voltage (VCEO)
600V
Collector-emitter Voltage-Max
1.6V
Current Rating
19A
Height
8.77mm
Input Type
STANDARD
Lead Free
Lead Free
Length
10.54mm
Max Collector Current
19A
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
60W
Mount
Through Hole
Package Quantity
50
Packaging
Rail/Tube
Power Dissipation
60W
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Termination
Through Hole
Turn-Off Delay Time
540ns
Turn-On Delay Time
27ns
DC Rated Voltage
600V
Width
4.69mm
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRG4BC20SPBF Datasheet
Download the complete datasheet for International Rectifier IRG4BC20SPBF to view detailed technical specifications.
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