N-Channel Insulated Gate Bipolar Transistor (IGBT) for surface mount applications. Features a 600V collector-emitter breakdown voltage and a 28A continuous collector current rating. This IGBT offers a maximum power dissipation of 100W and operates across a wide temperature range from -55°C to 150°C. Packaged in a D2PAK with a 42ns reverse recovery time and 60ns turn-on delay.
PackageD2PAK
Current Rating28A
MountingSurface Mount
Power100W
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Technical Specifications
International Rectifier IRG4BC30KD-SPBF technical specifications.
General
| Package/Case | D2PAK |
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Voltage (VCEO) | 2.88V |
| Collector-emitter Voltage-Max | 2.7V |
| Current Rating | 28A |
| Height | 4.83mm |
| Input Type | STANDARD |
| Lead Free | Lead Free |
| Length | 10.67mm |
| Max Collector Current | 28A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 100W |
| Mount | Surface Mount |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Power Dissipation | 100W |
| Reach SVHC Compliant | No |
| Reverse Recovery Time | 42ns |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 160ns |
| Turn-On Delay Time | 60ns |
| DC Rated Voltage | 600V |
| Width | 9.65mm |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRG4BC30KD-SPBF Datasheet
Download the complete datasheet for International Rectifier IRG4BC30KD-SPBF to view detailed technical specifications.
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