N-Channel Insulated Gate Bipolar Transistor (IGBT) for surface mount applications. Features a 600V collector-emitter breakdown voltage and a 28A continuous collector current rating. This IGBT offers a maximum power dissipation of 100W and operates across a wide temperature range from -55°C to 150°C. Packaged in a D2PAK with a 42ns reverse recovery time and 60ns turn-on delay.
PackageD2PAK
Current Rating28A
MountingSurface Mount
Power100W
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Technical Specifications
International Rectifier IRG4BC30KD-SPBF technical specifications.
General
Package/Case
D2PAK
Collector Emitter Breakdown Voltage
600V
Collector Emitter Voltage (VCEO)
2.88V
Collector-emitter Voltage-Max
2.7V
Current Rating
28A
Height
4.83mm
Input Type
STANDARD
Lead Free
Lead Free
Length
10.67mm
Max Collector Current
28A
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
100W
Mount
Surface Mount
Package Quantity
50
Packaging
Rail/Tube
Power Dissipation
100W
Reach SVHC Compliant
No
Reverse Recovery Time
42ns
RoHS Compliant
Yes
Turn-Off Delay Time
160ns
Turn-On Delay Time
60ns
DC Rated Voltage
600V
Width
9.65mm
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRG4BC30KD-SPBF Datasheet
Download the complete datasheet for International Rectifier IRG4BC30KD-SPBF to view detailed technical specifications.
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