N-channel Insulated Gate Bipolar Transistor (IGBT) featuring a 600V Collector Emitter Breakdown Voltage and a 28A continuous collector current. This through-hole component offers a low Collector Emitter Saturation Voltage of 2.21V and a maximum power dissipation of 100W. Packaged in a TO-220AB plastic housing, it operates within a temperature range of -55°C to 150°C and is RoHS compliant. Turn-on delay is 60ns with a turn-off delay of 160ns.
PackageTO-220AB
Current Rating28A
MountingThrough Hole
Power100W
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Technical Specifications
International Rectifier IRG4BC30KDPBF technical specifications.
General
Package/Case
TO-220AB
Collector Emitter Breakdown Voltage
600V
Collector Emitter Saturation Voltage
2.21V
Collector Emitter Voltage (VCEO)
600V
Collector-emitter Voltage-Max
2.7V
Current Rating
28A
Height
8.77mm
Input Type
STANDARD
Lead Free
Lead Free
Length
10.54mm
Max Collector Current
28A
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
100W
Mount
Through Hole
Package Quantity
50
Packaging
Rail/Tube
Power Dissipation
100W
Radiation Hardening
No
Reach SVHC Compliant
No
Reverse Recovery Time
42ns
RoHS Compliant
Yes
Turn-Off Delay Time
160ns
Turn-On Delay Time
60ns
DC Rated Voltage
600V
Width
4.69mm
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRG4BC30KDPBF Datasheet
Download the complete datasheet for International Rectifier IRG4BC30KDPBF to view detailed technical specifications.
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