
N-channel Insulated Gate Bipolar Transistor (IGBT) featuring a 600V Collector Emitter Breakdown Voltage and a 28A continuous collector current. This through-hole component offers a low Collector Emitter Saturation Voltage of 2.21V and a maximum power dissipation of 100W. Packaged in a TO-220AB plastic housing, it operates within a temperature range of -55°C to 150°C and is RoHS compliant. Turn-on delay is 60ns with a turn-off delay of 160ns.
International Rectifier IRG4BC30KDPBF technical specifications.
| Package/Case | TO-220AB |
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Saturation Voltage | 2.21V |
| Collector Emitter Voltage (VCEO) | 600V |
| Collector-emitter Voltage-Max | 2.7V |
| Current Rating | 28A |
| Height | 8.77mm |
| Input Type | STANDARD |
| Lead Free | Lead Free |
| Length | 10.54mm |
| Max Collector Current | 28A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 100W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Power Dissipation | 100W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Reverse Recovery Time | 42ns |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 160ns |
| Turn-On Delay Time | 60ns |
| DC Rated Voltage | 600V |
| Width | 4.69mm |
| RoHS | Compliant |
Download the complete datasheet for International Rectifier IRG4BC30KDPBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
