International Rectifier
IRG4BH20K-S
Insulated Gate Bipolar Transistor, 11A I(C), 1200V V(BR)CES, N-Channel, TO-263AB, PLASTIC, D2PAK-3
PackageD2PAK
MountingSurface Mount
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Technical Specifications
International Rectifier IRG4BH20K-S technical specifications.
General
| Package/Case | D2PAK |
| Collector Emitter Breakdown Voltage | 1.2kV |
| Collector Emitter Voltage (VCEO) | 1.2kV |
| Element Configuration | Single |
| Max Collector Current | 11A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 60W |
| Mount | Surface Mount |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| RoHS Compliant | No |
Compliance
| RoHS | Not Compliant |
Datasheet
International Rectifier IRG4BH20K-S Datasheet
Download the complete datasheet for International Rectifier IRG4BH20K-S to view detailed technical specifications.
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