N-Channel Insulated Gate Bipolar Transistor (IGBT) featuring a 600V Collector Emitter Breakdown Voltage and a 49A Max Collector Current. This component offers a 1.85V Collector Emitter Saturation Voltage and a 160W Max Power Dissipation. Designed for through-hole mounting, it is housed in a TO-247AC plastic package and operates within a temperature range of -55°C to 150°C. The device is RoHS compliant and lead-free.
PackageTO-247AC
Current Rating49A
MountingThrough Hole
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Technical Specifications
International Rectifier IRG4PC40FPBF technical specifications.
General
| Package/Case | TO-247AC |
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Saturation Voltage | 1.85V |
| Collector Emitter Voltage (VCEO) | 600V |
| Collector-emitter Voltage-Max | 1.7V |
| Current Rating | 49A |
| Height | 20.3mm |
| Input Type | STANDARD |
| Lead Free | Lead Free |
| Length | 15.9mm |
| Max Collector Current | 49A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 160W |
| Mount | Through Hole |
| Package Quantity | 25 |
| Packaging | Bulk |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 240ns |
| Turn-On Delay Time | 26ns |
| DC Rated Voltage | 600V |
| Width | 5.3mm |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRG4PC40FPBF Datasheet
Download the complete datasheet for International Rectifier IRG4PC40FPBF to view detailed technical specifications.
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