N-Channel Insulated Gate Bipolar Transistor (IGBT) featuring a 600V Collector Emitter Breakdown Voltage and a 49A Max Collector Current. This component offers a 1.85V Collector Emitter Saturation Voltage and a 160W Max Power Dissipation. Designed for through-hole mounting, it is housed in a TO-247AC plastic package and operates within a temperature range of -55°C to 150°C. The device is RoHS compliant and lead-free.
PackageTO-247AC
Current Rating49A
MountingThrough Hole
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Technical Specifications
International Rectifier IRG4PC40FPBF technical specifications.
General
Package/Case
TO-247AC
Collector Emitter Breakdown Voltage
600V
Collector Emitter Saturation Voltage
1.85V
Collector Emitter Voltage (VCEO)
600V
Collector-emitter Voltage-Max
1.7V
Current Rating
49A
Height
20.3mm
Input Type
STANDARD
Lead Free
Lead Free
Length
15.9mm
Max Collector Current
49A
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
160W
Mount
Through Hole
Package Quantity
25
Packaging
Bulk
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Turn-Off Delay Time
240ns
Turn-On Delay Time
26ns
DC Rated Voltage
600V
Width
5.3mm
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRG4PC40FPBF Datasheet
Download the complete datasheet for International Rectifier IRG4PC40FPBF to view detailed technical specifications.
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