N-Channel Insulated Gate Bipolar Transistor (IGBT) featuring a 600V Collector-Emitter Breakdown Voltage and a 70A Max Collector Current. This through-hole mounted component offers a low Collector-Emitter Saturation Voltage of 1.79V and a Max Power Dissipation of 200W. Packaged in a TO-247AC plastic package, it operates within a temperature range of -55°C to 150°C and is RoHS compliant. Key switching parameters include a 55ns Turn-On Delay Time and a 240ns Turn-Off Delay Time.
PackageTO-247AC
Current Rating70A
MountingThrough Hole
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Technical Specifications
International Rectifier IRG4PC50FDPBF technical specifications.
General
Package/Case
TO-247AC
Collector Emitter Breakdown Voltage
600V
Collector Emitter Saturation Voltage
1.79V
Collector Emitter Voltage (VCEO)
600V
Collector-emitter Voltage-Max
1.6V
Current Rating
70A
Height
20.3mm
Input Type
STANDARD
Lead Free
Lead Free
Length
15.9mm
Max Collector Current
70A
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
200W
Mount
Through Hole
Package Quantity
25
Packaging
Bulk
Radiation Hardening
No
Reach SVHC Compliant
No
Reverse Recovery Time
50ns
RoHS Compliant
Yes
Turn-Off Delay Time
240ns
Turn-On Delay Time
55ns
DC Rated Voltage
600V
Width
5.3mm
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRG4PC50FDPBF Datasheet
Download the complete datasheet for International Rectifier IRG4PC50FDPBF to view detailed technical specifications.
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