N-Channel Insulated Gate Bipolar Transistor (IGBT) featuring a 600V Collector-Emitter Breakdown Voltage and a 70A Max Collector Current. This through-hole mounted component offers a low Collector-Emitter Saturation Voltage of 1.79V and a Max Power Dissipation of 200W. Packaged in a TO-247AC plastic package, it operates within a temperature range of -55°C to 150°C and is RoHS compliant. Key switching parameters include a 55ns Turn-On Delay Time and a 240ns Turn-Off Delay Time.
PackageTO-247AC
Current Rating70A
MountingThrough Hole
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Technical Specifications
International Rectifier IRG4PC50FDPBF technical specifications.
General
| Package/Case | TO-247AC |
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Saturation Voltage | 1.79V |
| Collector Emitter Voltage (VCEO) | 600V |
| Collector-emitter Voltage-Max | 1.6V |
| Current Rating | 70A |
| Height | 20.3mm |
| Input Type | STANDARD |
| Lead Free | Lead Free |
| Length | 15.9mm |
| Max Collector Current | 70A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 200W |
| Mount | Through Hole |
| Package Quantity | 25 |
| Packaging | Bulk |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Reverse Recovery Time | 50ns |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 240ns |
| Turn-On Delay Time | 55ns |
| DC Rated Voltage | 600V |
| Width | 5.3mm |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRG4PC50FDPBF Datasheet
Download the complete datasheet for International Rectifier IRG4PC50FDPBF to view detailed technical specifications.
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