N-Channel Insulated Gate Bipolar Transistor (IGBT) with a 600V Collector-Emitter Breakdown Voltage and 52A continuous collector current. Features a low 1.84V Collector-Emitter Saturation Voltage and 200W maximum power dissipation. Packaged in a TO-247AC through-hole plastic package, this RoHS compliant component operates from -55°C to 150°C with a turn-on delay of 63ns and turn-off delay of 150ns.
PackageTO-247AC
Current Rating52A
MountingThrough Hole
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Technical Specifications
International Rectifier IRG4PC50KDPBF technical specifications.
General
Package/Case
TO-247AC
Collector Emitter Breakdown Voltage
600V
Collector Emitter Saturation Voltage
1.84V
Collector Emitter Voltage (VCEO)
600V
Collector-emitter Voltage-Max
2.2V
Current Rating
52A
Height
20.3mm
Input Type
STANDARD
Lead Free
Lead Free
Length
15.9mm
Max Collector Current
52A
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
200W
Mount
Through Hole
Package Quantity
25
Packaging
Bulk
Radiation Hardening
No
Reach SVHC Compliant
No
Reverse Recovery Time
50ns
RoHS Compliant
Yes
Turn-Off Delay Time
150ns
Turn-On Delay Time
63ns
DC Rated Voltage
600V
Width
5.3mm
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRG4PC50KDPBF Datasheet
Download the complete datasheet for International Rectifier IRG4PC50KDPBF to view detailed technical specifications.
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