N-channel Insulated Gate Bipolar Transistor (IGBT) with a 600V Collector-Emitter Breakdown Voltage and 52A continuous collector current. Features a low 1.84V Collector-Emitter Saturation Voltage and 200W maximum power dissipation. Packaged in a TO-247AC through-hole plastic package, this RoHS compliant component operates from -55°C to 150°C. Turn-on delay is 38ns with a turn-off delay of 160ns.
PackageTO-247AC
Current Rating52A
MountingThrough Hole
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Technical Specifications
International Rectifier IRG4PC50KPBF technical specifications.
General
| Package/Case | TO-247AC |
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Saturation Voltage | 1.84V |
| Collector Emitter Voltage (VCEO) | 600V |
| Collector-emitter Voltage-Max | 2.2V |
| Current Rating | 52A |
| Height | 20.3mm |
| Input Type | STANDARD |
| Lead Free | Lead Free |
| Length | 15.9mm |
| Max Collector Current | 52A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 200W |
| Mount | Through Hole |
| Package Quantity | 25 |
| Packaging | Bulk |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 160ns |
| Turn-On Delay Time | 38ns |
| DC Rated Voltage | 600V |
| Width | 5.3mm |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRG4PC50KPBF Datasheet
Download the complete datasheet for International Rectifier IRG4PC50KPBF to view detailed technical specifications.
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