N-channel Insulated Gate Bipolar Transistor (IGBT) featuring a 600V Collector-Emitter Breakdown Voltage and a 70A continuous collector current. This through-hole component offers a low Collector-Emitter Saturation Voltage of 1.36V and a maximum power dissipation of 200W. Packaged in a TO-247AC, it operates within a temperature range of -55°C to 150°C and is RoHS compliant. Turn-on delay is 33ns with a turn-off delay of 650ns.
PackageTO-247AC
Current Rating70A
MountingThrough Hole
Power200W
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Technical Specifications
International Rectifier IRG4PC50SPBF technical specifications.
General
Package/Case
TO-247AC
Collector Emitter Breakdown Voltage
600V
Collector Emitter Saturation Voltage
1.36V
Collector Emitter Voltage (VCEO)
600V
Collector-emitter Voltage-Max
1.36V
Current Rating
70A
Height
20.3mm
Input Type
STANDARD
Lead Free
Lead Free
Length
15.9mm
Max Collector Current
70A
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
200W
Mount
Through Hole
Package Quantity
25
Packaging
Rail/Tube
Power Dissipation
200W
Radiation Hardening
No
RoHS Compliant
Yes
Turn-Off Delay Time
650ns
Turn-On Delay Time
33ns
DC Rated Voltage
600V
Width
5.3mm
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRG4PC50SPBF Datasheet
Download the complete datasheet for International Rectifier IRG4PC50SPBF to view detailed technical specifications.
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