
N-channel Insulated Gate Bipolar Transistor (IGBT) featuring a 600V Collector-Emitter Breakdown Voltage and a 70A continuous collector current. This through-hole component offers a low Collector-Emitter Saturation Voltage of 1.36V and a maximum power dissipation of 200W. Packaged in a TO-247AC, it operates within a temperature range of -55°C to 150°C and is RoHS compliant. Turn-on delay is 33ns with a turn-off delay of 650ns.
International Rectifier IRG4PC50SPBF technical specifications.
| Package/Case | TO-247AC |
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Saturation Voltage | 1.36V |
| Collector Emitter Voltage (VCEO) | 600V |
| Collector-emitter Voltage-Max | 1.36V |
| Current Rating | 70A |
| Height | 20.3mm |
| Input Type | STANDARD |
| Lead Free | Lead Free |
| Length | 15.9mm |
| Max Collector Current | 70A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 200W |
| Mount | Through Hole |
| Package Quantity | 25 |
| Packaging | Rail/Tube |
| Power Dissipation | 200W |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 650ns |
| Turn-On Delay Time | 33ns |
| DC Rated Voltage | 600V |
| Width | 5.3mm |
| RoHS | Compliant |
Download the complete datasheet for International Rectifier IRG4PC50SPBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
