N-Channel Insulated Gate Bipolar Transistor (IGBT) featuring a 600V Collector-Emitter Breakdown Voltage and a 55A Max Collector Current. This through-hole mounted component offers a 2V Collector-Emitter Saturation Voltage and a maximum power dissipation of 200W. Operating across a temperature range of -55°C to 150°C, it comes in a TO-247AC package. The device is RoHS compliant and has a reverse recovery time of 50ns.
PackageTO-247AC
Current Rating55A
MountingThrough Hole
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Technical Specifications
International Rectifier IRG4PC50UD-EPBF technical specifications.
General
Package/Case
TO-247AC
Collector Emitter Breakdown Voltage
600V
Collector Emitter Saturation Voltage
2V
Collector Emitter Voltage (VCEO)
600V
Collector-emitter Voltage-Max
2V
Current Rating
55A
Height
20.7mm
Input Type
STANDARD
Lead Free
Lead Free
Length
15.87mm
Max Collector Current
55A
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
200W
Mount
Through Hole
Package Quantity
25
Packaging
Bulk
Radiation Hardening
No
Reach SVHC Compliant
No
Reverse Recovery Time
50ns
RoHS Compliant
Yes
DC Rated Voltage
600V
Weight
1.340411oz
Width
5.31mm
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRG4PC50UD-EPBF Datasheet
Download the complete datasheet for International Rectifier IRG4PC50UD-EPBF to view detailed technical specifications.
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