N-channel Insulated Gate Bipolar Transistor (IGBT) featuring a 600V Collector-Emitter Breakdown Voltage and a 55A continuous current rating. This through-hole component offers a low 2V Collector-Emitter Saturation Voltage and a maximum power dissipation of 200W. Packaged in a TO-247AC plastic housing, it operates within a temperature range of -55°C to 150°C and is RoHS compliant.
PackageTO-247AC
Current Rating55A
MountingThrough Hole
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Technical Specifications
International Rectifier IRG4PC50UDPBF technical specifications.
General
Package/Case
TO-247AC
Collector Emitter Breakdown Voltage
600V
Collector Emitter Saturation Voltage
2V
Collector Emitter Voltage (VCEO)
600V
Collector-emitter Voltage-Max
2V
Current Rating
55A
Height
20.7mm
Input Type
STANDARD
Lead Free
Lead Free
Length
15.87mm
Max Collector Current
55A
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
200W
Mount
Through Hole
Package Quantity
25
Packaging
Bulk
Reach SVHC Compliant
No
Reverse Recovery Time
50ns
RoHS Compliant
Yes
Turn-Off Delay Time
140ns
Turn-On Delay Time
46ns
DC Rated Voltage
600V
Width
5.31mm
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRG4PC50UDPBF Datasheet
Download the complete datasheet for International Rectifier IRG4PC50UDPBF to view detailed technical specifications.
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