N-channel Insulated Gate Bipolar Transistor (IGBT) featuring a 600V Collector-Emitter Breakdown Voltage and a 55A continuous current rating. This through-hole component offers a low 2V Collector-Emitter Saturation Voltage and a maximum power dissipation of 200W. Packaged in a TO-247AC plastic housing, it operates within a temperature range of -55°C to 150°C and is RoHS compliant.
PackageTO-247AC
Current Rating55A
MountingThrough Hole
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Technical Specifications
International Rectifier IRG4PC50UDPBF technical specifications.
General
| Package/Case | TO-247AC |
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Saturation Voltage | 2V |
| Collector Emitter Voltage (VCEO) | 600V |
| Collector-emitter Voltage-Max | 2V |
| Current Rating | 55A |
| Height | 20.7mm |
| Input Type | STANDARD |
| Lead Free | Lead Free |
| Length | 15.87mm |
| Max Collector Current | 55A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 200W |
| Mount | Through Hole |
| Package Quantity | 25 |
| Packaging | Bulk |
| Reach SVHC Compliant | No |
| Reverse Recovery Time | 50ns |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 140ns |
| Turn-On Delay Time | 46ns |
| DC Rated Voltage | 600V |
| Width | 5.31mm |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRG4PC50UDPBF Datasheet
Download the complete datasheet for International Rectifier IRG4PC50UDPBF to view detailed technical specifications.
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