N-channel Insulated Gate Bipolar Transistor (IGBT) featuring a 600V Collector-Emitter Breakdown Voltage and a 55A continuous collector current. This through-hole component offers a low Collector-Emitter Saturation Voltage of 2.4V and a maximum power dissipation of 200W. Housed in a TO-247AC plastic package, it operates within a temperature range of -55°C to 150°C and boasts a turn-on delay of 32ns and turn-off delay of 170ns. This RoHS compliant device is lead-free.
PackageTO-247AC
Current Rating55A
MountingThrough Hole
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Technical Specifications
International Rectifier IRG4PC50UPBF technical specifications.
General
Package/Case
TO-247AC
Collector Emitter Breakdown Voltage
600V
Collector Emitter Saturation Voltage
2.4V
Collector Emitter Voltage (VCEO)
600V
Collector-emitter Voltage-Max
2V
Current Rating
55A
Height
20.3mm
Input Type
STANDARD
Lead Free
Lead Free
Length
15.9mm
Max Collector Current
55A
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
200W
Mount
Through Hole
Package Quantity
25
Packaging
Bulk
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Turn-Off Delay Time
170ns
Turn-On Delay Time
32ns
DC Rated Voltage
600V
Width
5.3mm
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRG4PC50UPBF Datasheet
Download the complete datasheet for International Rectifier IRG4PC50UPBF to view detailed technical specifications.
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