
N-Channel Insulated Gate Bipolar Transistor (IGBT) for through-hole mounting in a TO-247AC plastic package. Features a 900V collector-emitter breakdown voltage and a 51A continuous collector current rating. Offers a maximum power dissipation of 200W and a low collector-emitter saturation voltage of 2.25V. Includes fast switching characteristics with turn-on delay time of 71ns and turn-off delay time of 150ns. This RoHS compliant component operates within a temperature range of -55°C to 150°C.
International Rectifier IRG4PF50WDPBF technical specifications.
| Package/Case | TO-247AC |
| Collector Emitter Breakdown Voltage | 900V |
| Collector Emitter Saturation Voltage | 2.25V |
| Collector Emitter Voltage (VCEO) | 900V |
| Collector-emitter Voltage-Max | 2.7V |
| Current Rating | 51A |
| Height | 20.3mm |
| Input Type | STANDARD |
| Lead Free | Lead Free |
| Length | 15.9mm |
| Max Collector Current | 51A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 200W |
| Mount | Through Hole |
| Package Quantity | 25 |
| Packaging | Bulk |
| Power Dissipation | 200W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Reverse Recovery Time | 90ns |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 150ns |
| Turn-On Delay Time | 71ns |
| DC Rated Voltage | 900V |
| Width | 5.3mm |
| RoHS | Compliant |
Download the complete datasheet for International Rectifier IRG4PF50WDPBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
