N-Channel Insulated Gate Bipolar Transistor (IGBT) for through-hole mounting in a TO-247AC plastic package. Features a 900V collector-emitter breakdown voltage and a 51A continuous collector current rating. Offers a maximum power dissipation of 200W and a low collector-emitter saturation voltage of 2.25V. Includes fast switching characteristics with turn-on delay time of 71ns and turn-off delay time of 150ns. This RoHS compliant component operates within a temperature range of -55°C to 150°C.
PackageTO-247AC
Current Rating51A
MountingThrough Hole
Power200W
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Technical Specifications
International Rectifier IRG4PF50WDPBF technical specifications.
General
Package/Case
TO-247AC
Collector Emitter Breakdown Voltage
900V
Collector Emitter Saturation Voltage
2.25V
Collector Emitter Voltage (VCEO)
900V
Collector-emitter Voltage-Max
2.7V
Current Rating
51A
Height
20.3mm
Input Type
STANDARD
Lead Free
Lead Free
Length
15.9mm
Max Collector Current
51A
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
200W
Mount
Through Hole
Package Quantity
25
Packaging
Bulk
Power Dissipation
200W
Radiation Hardening
No
Reach SVHC Compliant
No
Reverse Recovery Time
90ns
RoHS Compliant
Yes
Turn-Off Delay Time
150ns
Turn-On Delay Time
71ns
DC Rated Voltage
900V
Width
5.3mm
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRG4PF50WDPBF Datasheet
Download the complete datasheet for International Rectifier IRG4PF50WDPBF to view detailed technical specifications.
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