N-Channel Insulated Gate Bipolar Transistor (IGBT) for high-power applications. Features a 600V Collector-Emitter Breakdown Voltage and 85A continuous collector current. Offers a low Collector-Emitter Saturation Voltage of 1.95V and a maximum power dissipation of 350W. Designed with a TO-274AA (SUPER-247) package for through-hole mounting, operating from -55°C to 150°C. Includes fast switching characteristics with a turn-on delay of 90ns and turn-off delay of 245ns. This RoHS compliant component is lead-free.
Current Rating85A
MountingThrough Hole
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Technical Specifications
International Rectifier IRG4PSC71UDPBF technical specifications.
General
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Saturation Voltage | 1.95V |
| Collector Emitter Voltage (VCEO) | 600V |
| Collector-emitter Voltage-Max | 2V |
| Current Rating | 85A |
| Height | 20.3mm |
| Input Type | STANDARD |
| Lead Free | Lead Free |
| Length | 15.6mm |
| Max Collector Current | 85A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 350W |
| Mount | Through Hole |
| Package Quantity | 25 |
| Packaging | Bulk |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Reverse Recovery Time | 82ns |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 245ns |
| Turn-On Delay Time | 90ns |
| DC Rated Voltage | 600V |
| Width | 5mm |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRG4PSC71UDPBF Datasheet
Download the complete datasheet for International Rectifier IRG4PSC71UDPBF to view detailed technical specifications.
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