N-Channel Insulated Gate Bipolar Transistor (IGBT) for high-power applications. Features a 600V Collector-Emitter Breakdown Voltage and 85A continuous collector current. Offers a low Collector-Emitter Saturation Voltage of 1.95V and a maximum power dissipation of 350W. Designed with a TO-274AA (SUPER-247) package for through-hole mounting, operating from -55°C to 150°C. Includes fast switching characteristics with a turn-on delay of 90ns and turn-off delay of 245ns. This RoHS compliant component is lead-free.
Current Rating85A
MountingThrough Hole
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Technical Specifications
International Rectifier IRG4PSC71UDPBF technical specifications.
General
Collector Emitter Breakdown Voltage
600V
Collector Emitter Saturation Voltage
1.95V
Collector Emitter Voltage (VCEO)
600V
Collector-emitter Voltage-Max
2V
Current Rating
85A
Height
20.3mm
Input Type
STANDARD
Lead Free
Lead Free
Length
15.6mm
Max Collector Current
85A
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
350W
Mount
Through Hole
Package Quantity
25
Packaging
Bulk
Radiation Hardening
No
Reach SVHC Compliant
No
Reverse Recovery Time
82ns
RoHS Compliant
Yes
Turn-Off Delay Time
245ns
Turn-On Delay Time
90ns
DC Rated Voltage
600V
Width
5mm
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRG4PSC71UDPBF Datasheet
Download the complete datasheet for International Rectifier IRG4PSC71UDPBF to view detailed technical specifications.
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