
N-Channel Insulated Gate Bipolar Transistor (IGBT) with a 600V Collector-Emitter Breakdown Voltage and 85A maximum collector current. Features a low 2V Collector-Emitter Saturation Voltage and 350W power dissipation. Operates across a wide temperature range from -55°C to 150°C. Packaged in a TO-274AA (SUPER-247) through-hole mount with lead-free termination. Turn-on delay is 34ns and turn-off delay is 56ns.
International Rectifier IRG4PSC71UPBF technical specifications.
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