N-Channel Insulated Gate Bipolar Transistor (IGBT) with a 600V Collector-Emitter Breakdown Voltage and 85A maximum collector current. Features a low 2V Collector-Emitter Saturation Voltage and 350W power dissipation. Operates across a wide temperature range from -55°C to 150°C. Packaged in a TO-274AA (SUPER-247) through-hole mount with lead-free termination. Turn-on delay is 34ns and turn-off delay is 56ns.
Current Rating85A
MountingThrough Hole
Power350W
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Technical Specifications
International Rectifier IRG4PSC71UPBF technical specifications.
General
Collector Emitter Breakdown Voltage
600V
Collector Emitter Saturation Voltage
2V
Collector Emitter Voltage (VCEO)
600V
Collector-emitter Voltage-Max
2V
Current Rating
85A
Height
20.8mm
Input Type
STANDARD
Lead Free
Lead Free
Length
16.1mm
Max Collector Current
85A
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
350W
Mount
Through Hole
Package Quantity
25
Packaging
Rail/Tube
Power Dissipation
350W
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Termination
Through Hole
Turn-Off Delay Time
56ns
Turn-On Delay Time
34ns
DC Rated Voltage
600V
Width
5.3mm
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRG4PSC71UPBF Datasheet
Download the complete datasheet for International Rectifier IRG4PSC71UPBF to view detailed technical specifications.
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