N-Channel Insulated Gate Bipolar Transistor (IGBT) with a 600V Collector-Emitter Breakdown Voltage and 85A maximum collector current. Features a low 2V Collector-Emitter Saturation Voltage and 350W power dissipation. Operates across a wide temperature range from -55°C to 150°C. Packaged in a TO-274AA (SUPER-247) through-hole mount with lead-free termination. Turn-on delay is 34ns and turn-off delay is 56ns.
Current Rating85A
MountingThrough Hole
Power350W
Quick Jump:
Technical Specifications
International Rectifier IRG4PSC71UPBF technical specifications.
General
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Saturation Voltage | 2V |
| Collector Emitter Voltage (VCEO) | 600V |
| Collector-emitter Voltage-Max | 2V |
| Current Rating | 85A |
| Height | 20.8mm |
| Input Type | STANDARD |
| Lead Free | Lead Free |
| Length | 16.1mm |
| Max Collector Current | 85A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 350W |
| Mount | Through Hole |
| Package Quantity | 25 |
| Packaging | Rail/Tube |
| Power Dissipation | 350W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Termination | Through Hole |
| Turn-Off Delay Time | 56ns |
| Turn-On Delay Time | 34ns |
| DC Rated Voltage | 600V |
| Width | 5.3mm |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRG4PSC71UPBF Datasheet
Download the complete datasheet for International Rectifier IRG4PSC71UPBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
