International Rectifier
IRG4RC10SDTRPBF
Insulated Gate Bipolar Transistor, 14A I(C), 600V V(BR)CES, N-Channel, TO-252AA, LEAD FREE, PLASTIC, DPAK-3
PackageTO-252-3
MountingSurface Mount
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Technical Specifications
International Rectifier IRG4RC10SDTRPBF technical specifications.
General
| Package/Case | TO-252-3 |
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Saturation Voltage | 1.1V |
| Collector Emitter Voltage (VCEO) | 1.1V |
| Collector-emitter Voltage-Max | 1.8V |
| Input Type | STANDARD |
| Max Breakdown Voltage | 600V |
| Max Collector Current | 14A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 38W |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Cut Tape |
| Reach SVHC Compliant | No |
| Reverse Recovery Time | 28ns |
| RoHS Compliant | Yes |
| Termination | SMD/SMT |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRG4RC10SDTRPBF Datasheet
Download the complete datasheet for International Rectifier IRG4RC10SDTRPBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.