The IRG6S330UPBF is an insulated gate bipolar transistor with a collector-emitter breakdown voltage of 330V and a maximum collector current of 70A. It is packaged in a D2PAK case and is designed for surface mount applications. The transistor has a maximum power dissipation of 160W and operates over a temperature range of -40°C to 150°C. It is compliant with RoHS regulations and is not radiation hardened.
PackageD2PAK
MountingSurface Mount
Power160W
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Technical Specifications
International Rectifier IRG6S330UPBF technical specifications.
General
| Package/Case | D2PAK |
| Collector Emitter Breakdown Voltage | 330V |
| Collector Emitter Saturation Voltage | 2.1V |
| Collector Emitter Voltage (VCEO) | 330V |
| Collector-emitter Voltage-Max | 2.1V |
| Input Type | STANDARD |
| Max Collector Current | 70A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 160W |
| Mount | Surface Mount |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Power Dissipation | 160W |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRG6S330UPBF Datasheet
Download the complete datasheet for International Rectifier IRG6S330UPBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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