International Rectifier
IRG7PH35UD1MPBF
Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel
PackageTO-247-3
MountingThrough Hole
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Technical Specifications
International Rectifier IRG7PH35UD1MPBF technical specifications.
General
| Package/Case | TO-247-3 |
| Collector Emitter Breakdown Voltage | 1.2kV |
| Collector Emitter Voltage (VCEO) | 1.2kV |
| Collector-emitter Voltage-Max | 2.2V |
| Input Type | STANDARD |
| Max Collector Current | 50A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 179W |
| Mount | Through Hole |
| Package Quantity | 25 |
| Packaging | Rail/Tube |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRG7PH35UD1MPBF Datasheet
Download the complete datasheet for International Rectifier IRG7PH35UD1MPBF to view detailed technical specifications.
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