The IRG7PSH54K10DPBF is an insulated gate bipolar transistor with a collector-emitter voltage rating of 1.2kV and a maximum collector current of 65A. It is packaged in a TO-247-3 case and is designed for through-hole mounting. The device is rated for operation over a temperature range of -40°C to 150°C and has a maximum power dissipation of 520W. The IRG7PSH54K10DPBF is RoHS compliant and is available in quantities of 25 per rail or tube packaging.
PackageTO-247-3
MountingThrough Hole
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Technical Specifications
International Rectifier IRG7PSH54K10DPBF technical specifications.
General
| Package/Case | TO-247-3 |
| Collector Emitter Saturation Voltage | 2.4V |
| Collector Emitter Voltage (VCEO) | 1.2kV |
| Collector-emitter Voltage-Max | 1.2kV |
| Max Collector Current | 65A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 520W |
| Mount | Through Hole |
| Package Quantity | 25 |
| Packaging | Rail/Tube |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Weight | 1.340411oz |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRG7PSH54K10DPBF Datasheet
Download the complete datasheet for International Rectifier IRG7PSH54K10DPBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.