
N-channel Insulated Gate Bipolar Transistor (IGBT) featuring a 600V Collector Emitter Breakdown Voltage and a 31A Max Collector Current. This through-hole component offers a low 2.2V Collector-emitter Voltage-Max and 208W Max Power Dissipation. Designed for demanding applications, it operates across a wide temperature range from -55°C to 150°C. The TO-220AB plastic package is lead-free and RoHS compliant, with a typical turn-on delay of 34ns and turn-off delay of 184ns.
International Rectifier IRGB15B60KDPBF technical specifications.
| Package/Case | TO-220AB |
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Saturation Voltage | 600V |
| Collector Emitter Voltage (VCEO) | 600V |
| Collector-emitter Voltage-Max | 2.2V |
| Current Rating | 31A |
| Height | 15.24mm |
| Input Type | STANDARD |
| Lead Free | Lead Free |
| Length | 10.54mm |
| Max Collector Current | 31A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 208W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Reverse Recovery Time | 92ns |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 184ns |
| Turn-On Delay Time | 34ns |
| DC Rated Voltage | 600V |
| Width | 4.69mm |
| RoHS | Compliant |
Download the complete datasheet for International Rectifier IRGB15B60KDPBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
