N-channel Insulated Gate Bipolar Transistor (IGBT) featuring a 600V Collector Emitter Breakdown Voltage and a 31A Max Collector Current. This through-hole component offers a low 2.2V Collector-emitter Voltage-Max and 208W Max Power Dissipation. Designed for demanding applications, it operates across a wide temperature range from -55°C to 150°C. The TO-220AB plastic package is lead-free and RoHS compliant, with a typical turn-on delay of 34ns and turn-off delay of 184ns.
PackageTO-220AB
Current Rating31A
MountingThrough Hole
Quick Jump:
Technical Specifications
International Rectifier IRGB15B60KDPBF technical specifications.
General
Package/Case
TO-220AB
Collector Emitter Breakdown Voltage
600V
Collector Emitter Saturation Voltage
600V
Collector Emitter Voltage (VCEO)
600V
Collector-emitter Voltage-Max
2.2V
Current Rating
31A
Height
15.24mm
Input Type
STANDARD
Lead Free
Lead Free
Length
10.54mm
Max Collector Current
31A
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
208W
Mount
Through Hole
Package Quantity
50
Packaging
Rail/Tube
Radiation Hardening
No
Reach SVHC Compliant
No
Reverse Recovery Time
92ns
RoHS Compliant
Yes
Turn-Off Delay Time
184ns
Turn-On Delay Time
34ns
DC Rated Voltage
600V
Width
4.69mm
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRGB15B60KDPBF Datasheet
Download the complete datasheet for International Rectifier IRGB15B60KDPBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
