N-channel Insulated Gate Bipolar Transistor (IGBT) featuring a 600V Collector Emitter Breakdown Voltage and a maximum collector current of 12A. This through-hole component offers a low Collector Emitter Saturation Voltage of 1.7V and a maximum power dissipation of 77W. Packaged in a TO-220AB lead-free package, it operates within a temperature range of -55°C to 150°C. Key switching characteristics include a turn-on delay time of 27ns and a turn-off delay time of 75ns.
PackageTO-220AB
MountingThrough Hole
Power77W
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Technical Specifications
International Rectifier IRGB4045DPBF technical specifications.
General
| Package/Case | TO-220AB |
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Saturation Voltage | 1.7V |
| Collector Emitter Voltage (VCEO) | 600V |
| Collector-emitter Voltage-Max | 2V |
| Height | 9.02mm |
| Input Type | STANDARD |
| Lead Free | Lead Free |
| Length | 10.66mm |
| Max Collector Current | 12A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 77W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Power Dissipation | 77W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Reverse Recovery Time | 74ns |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 75ns |
| Turn-On Delay Time | 27ns |
| Width | 4.82mm |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRGB4045DPBF Datasheet
Download the complete datasheet for International Rectifier IRGB4045DPBF to view detailed technical specifications.
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