The IRGB4B60KD1PBF is an insulated gate bipolar transistor with a collector-emitter breakdown voltage of 600V and a maximum collector current of 11A. It is packaged in a TO-220-3 case and is designed for through-hole mounting. The device operates over a temperature range of -55°C to 175°C and is compliant with RoHS regulations. The transistor has a maximum power dissipation of 63W and a reverse recovery time of 93ns.
PackageTO-220-3
Current Rating11A
MountingThrough Hole
Power63W
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Technical Specifications
International Rectifier IRGB4B60KD1PBF technical specifications.
General
| Package/Case | TO-220-3 |
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Saturation Voltage | 2.5V |
| Collector Emitter Voltage (VCEO) | 600V |
| Collector-emitter Voltage-Max | 2.5V |
| Current Rating | 11A |
| Height | 15.24mm |
| Input Type | STANDARD |
| Lead Free | Lead Free |
| Length | 10.54mm |
| Max Collector Current | 11A |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 63W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Power Dissipation | 63W |
| Reverse Recovery Time | 93ns |
| RoHS Compliant | Yes |
| DC Rated Voltage | 600V |
| Width | 4.69mm |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRGB4B60KD1PBF Datasheet
Download the complete datasheet for International Rectifier IRGB4B60KD1PBF to view detailed technical specifications.
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