
N-Channel Insulated Gate Bipolar Transistor (IGBT) featuring a 1200V Collector-Emitter Breakdown Voltage and a 12A continuous collector current. This through-hole mounted component offers a low Collector-Emitter Saturation Voltage of 2V and a maximum power dissipation of 89W. Operating across a wide temperature range from -55°C to 150°C, it boasts fast switching speeds with a 22ns turn-on delay and 100ns turn-off delay. The TO-220AB package is lead-free and RoHS compliant.
International Rectifier IRGB5B120KDPBF technical specifications.
| Package/Case | TO-220AB |
| Collector Emitter Breakdown Voltage | 1.2kV |
| Collector Emitter Saturation Voltage | 2V |
| Collector Emitter Voltage (VCEO) | 1.2kV |
| Collector-emitter Voltage-Max | 3V |
| Current Rating | 12A |
| Height | 15.24mm |
| Input Type | STANDARD |
| Lead Free | Lead Free |
| Length | 10.54mm |
| Max Collector Current | 12A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 89W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Power Dissipation | 89W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Reverse Recovery Time | 160ns |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 100ns |
| Turn-On Delay Time | 22ns |
| DC Rated Voltage | 1.2kV |
| Width | 4.69mm |
| RoHS | Compliant |
Download the complete datasheet for International Rectifier IRGB5B120KDPBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
