N-Channel Insulated Gate Bipolar Transistor (IGBT) featuring a 1200V Collector-Emitter Breakdown Voltage and a 12A continuous collector current. This through-hole mounted component offers a low Collector-Emitter Saturation Voltage of 2V and a maximum power dissipation of 89W. Operating across a wide temperature range from -55°C to 150°C, it boasts fast switching speeds with a 22ns turn-on delay and 100ns turn-off delay. The TO-220AB package is lead-free and RoHS compliant.
PackageTO-220AB
Current Rating12A
MountingThrough Hole
Power89W
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Technical Specifications
International Rectifier IRGB5B120KDPBF technical specifications.
General
Package/Case
TO-220AB
Collector Emitter Breakdown Voltage
1.2kV
Collector Emitter Saturation Voltage
2V
Collector Emitter Voltage (VCEO)
1.2kV
Collector-emitter Voltage-Max
3V
Current Rating
12A
Height
15.24mm
Input Type
STANDARD
Lead Free
Lead Free
Length
10.54mm
Max Collector Current
12A
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
89W
Mount
Through Hole
Package Quantity
50
Packaging
Rail/Tube
Power Dissipation
89W
Radiation Hardening
No
Reach SVHC Compliant
No
Reverse Recovery Time
160ns
RoHS Compliant
Yes
Turn-Off Delay Time
100ns
Turn-On Delay Time
22ns
DC Rated Voltage
1.2kV
Width
4.69mm
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRGB5B120KDPBF Datasheet
Download the complete datasheet for International Rectifier IRGB5B120KDPBF to view detailed technical specifications.
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