N-channel Insulated Gate Bipolar Transistor (IGBT) featuring a 600V Collector Emitter Breakdown Voltage and a 40A continuous current rating. This through-hole mounted component offers a low Collector Emitter Saturation Voltage of 2.35V and a maximum power dissipation of 220W. Encased in a TO-247AC plastic package, it operates within a temperature range of -55°C to 150°C and is RoHS compliant. Key switching characteristics include a 20ns turn-on delay and a 115ns turn-off delay.
PackageTO-247AC
Current Rating40A
MountingThrough Hole
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Technical Specifications
International Rectifier IRGP20B60PDPBF technical specifications.
General
Package/Case
TO-247AC
Collector Emitter Breakdown Voltage
600V
Collector Emitter Saturation Voltage
2.35V
Collector Emitter Voltage (VCEO)
600V
Collector-emitter Voltage-Max
2.8V
Current Rating
40A
Height
20.3mm
Input Type
STANDARD
Lead Free
Lead Free
Length
15.9mm
Max Collector Current
40A
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
220W
Mount
Through Hole
Package Quantity
25
Packaging
Bulk
Radiation Hardening
No
Reach SVHC Compliant
No
Reverse Recovery Time
42ns
RoHS Compliant
Yes
Turn-Off Delay Time
115ns
Turn-On Delay Time
20ns
DC Rated Voltage
600V
Width
5.3mm
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRGP20B60PDPBF Datasheet
Download the complete datasheet for International Rectifier IRGP20B60PDPBF to view detailed technical specifications.
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