N-Channel Insulated Gate Bipolar Transistor (IGBT) with a 600V Collector Emitter Breakdown Voltage and 75A Max Collector Current. Features a 2.35V Collector Emitter Saturation Voltage and 390W Max Power Dissipation. Packaged in a TO-247AC through-hole mount, this lead-free component operates from -55°C to 150°C. Turn-on delay is 30ns with a turn-off delay of 130ns and a reverse recovery time of 42ns.
PackageTO-247AC
Current Rating75A
MountingThrough Hole
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Technical Specifications
International Rectifier IRGP50B60PD1PBF technical specifications.
General
| Package/Case | TO-247AC |
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Saturation Voltage | 2.35V |
| Collector Emitter Voltage (VCEO) | 600V |
| Collector-emitter Voltage-Max | 2.85V |
| Current Rating | 75A |
| Height | 20.3mm |
| Input Type | STANDARD |
| Lead Free | Lead Free |
| Length | 15.9mm |
| Max Collector Current | 75A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 390W |
| Mount | Through Hole |
| Package Quantity | 25 |
| Packaging | Bulk |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Reverse Recovery Time | 42ns |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 130ns |
| Turn-On Delay Time | 30ns |
| DC Rated Voltage | 600V |
| Width | 5.3mm |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRGP50B60PD1PBF Datasheet
Download the complete datasheet for International Rectifier IRGP50B60PD1PBF to view detailed technical specifications.
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