N-Channel Insulated Gate Bipolar Transistor (IGBT) with a 600V Collector Emitter Breakdown Voltage and 75A Max Collector Current. Features a 2.35V Collector Emitter Saturation Voltage and 390W Max Power Dissipation. Packaged in a TO-247AC through-hole mount, this lead-free component operates from -55°C to 150°C. Turn-on delay is 30ns with a turn-off delay of 130ns and a reverse recovery time of 42ns.
PackageTO-247AC
Current Rating75A
MountingThrough Hole
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Technical Specifications
International Rectifier IRGP50B60PD1PBF technical specifications.
General
Package/Case
TO-247AC
Collector Emitter Breakdown Voltage
600V
Collector Emitter Saturation Voltage
2.35V
Collector Emitter Voltage (VCEO)
600V
Collector-emitter Voltage-Max
2.85V
Current Rating
75A
Height
20.3mm
Input Type
STANDARD
Lead Free
Lead Free
Length
15.9mm
Max Collector Current
75A
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
390W
Mount
Through Hole
Package Quantity
25
Packaging
Bulk
Radiation Hardening
No
Reach SVHC Compliant
No
Reverse Recovery Time
42ns
RoHS Compliant
Yes
Turn-Off Delay Time
130ns
Turn-On Delay Time
30ns
DC Rated Voltage
600V
Width
5.3mm
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRGP50B60PD1PBF Datasheet
Download the complete datasheet for International Rectifier IRGP50B60PD1PBF to view detailed technical specifications.
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