The IRGS8B60KPBF is a high-power insulated gate bipolar transistor with a collector-emitter breakdown voltage of 600V and a maximum collector current of 28A. It is packaged in a lead-free plastic D2PAK-3 package and is suitable for surface mount applications. The transistor operates over a temperature range of -55°C to 175°C and has a maximum power dissipation of 167W. The device is RoHS compliant and is available in quantities of 50 per rail/tube packaging.
PackageD2PAK
Current Rating28A
MountingSurface Mount
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Technical Specifications
International Rectifier IRGS8B60KPBF technical specifications.
General
| Package/Case | D2PAK |
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Voltage (VCEO) | 600V |
| Collector-emitter Voltage-Max | 2.2V |
| Current Rating | 28A |
| Height | 4.83mm |
| Input Type | STANDARD |
| Lead Free | Lead Free |
| Length | 10.67mm |
| Max Collector Current | 28A |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 167W |
| Mount | Surface Mount |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| RoHS Compliant | Yes |
| DC Rated Voltage | 600V |
| Width | 9.65mm |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRGS8B60KPBF Datasheet
Download the complete datasheet for International Rectifier IRGS8B60KPBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.