International Rectifier
IRHN8054
Power Field-Effect Transistor, 35A I(D), 60V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, SMD-1, 3 PIN
MountingSurface Mount
Quick Jump:
Technical Specifications
International Rectifier IRHN8054 technical specifications.
General
| Continuous Drain Current (ID) | 35A |
| Gate to Source Voltage (Vgs) | 20V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Mount | Surface Mount |
| Packaging | Bulk |
| Radiation Hardening | Yes |
| RoHS Compliant | No |
Compliance
| RoHS | Not CompliantYes |
Datasheet
International Rectifier IRHN8054 Datasheet
Download the complete datasheet for International Rectifier IRHN8054 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.