N-Channel MOSFET featuring 40V drain-source breakdown voltage and 130A continuous drain current. This component offers a low 6.5mΩ Rds(on) at a 10V gate-source voltage. With a maximum power dissipation of 150W and an operating temperature range of -55°C to 175°C, it is suitable for demanding applications. The TO-262 package facilitates through-hole mounting.
PackageTO-262
Current Rating130A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
International Rectifier IRL1004LPBF technical specifications.
General
| Package/Case | TO-262 |
| Continuous Drain Current (ID) | 130A |
| Current Rating | 130A |
| Drain to Source Breakdown Voltage | 40V |
| Drain to Source Resistance | 9mR |
| Drain to Source Voltage (Vdss) | 40V |
| Gate to Source Voltage (Vgs) | 16V |
| Height | 10.54mm |
| Input Capacitance | 5.33nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 3.8W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 150W |
| Rds On Max | 6.5mR |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Turn-Off Delay Time | 25ns |
| Turn-On Delay Time | 16ns |
| DC Rated Voltage | 40V |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRL1004LPBF Datasheet
Download the complete datasheet for International Rectifier IRL1004LPBF to view detailed technical specifications.
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