
N-Channel Power MOSFET, D2PAK package, featuring 40V drain-source breakdown voltage and 130A continuous drain current. Offers a low 6.5mΩ Rds On resistance for efficient power handling. Designed for surface mounting with a maximum power dissipation of 150W, operating from -55°C to 175°C. Includes fast switching characteristics with turn-on delay of 16ns and fall time of 14ns.
International Rectifier IRL1004STRLPBF technical specifications.
| Package/Case | D2PAK |
| Continuous Drain Current (ID) | 130A |
| Current Rating | 110A |
| Drain to Source Breakdown Voltage | 40V |
| Drain to Source Resistance | 9mR |
| Drain to Source Voltage (Vdss) | 40V |
| Fall Time | 14ns |
| Gate to Source Voltage (Vgs) | 16V |
| Height | 4.83mm |
| Input Capacitance | 5.33nF |
| Length | 10.67mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 3.8W |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 150W |
| Radiation Hardening | No |
| Rds On Max | 6.5mR |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Turn-Off Delay Time | 25ns |
| Turn-On Delay Time | 16ns |
| Width | 9.65mm |
| RoHS | Compliant |
Download the complete datasheet for International Rectifier IRL1004STRLPBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
