International Rectifier
IRL1104LPBF
Infineon IRL1104LPBF N-channel MOSFET Transistor, 104 A, 40 V, 3-Pin TO-262
PackageTO-262
MountingThrough Hole
PolarityN-CHANNEL
Power167W
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Technical Specifications
International Rectifier IRL1104LPBF technical specifications.
General
| Package/Case | TO-262 |
| Continuous Drain Current (ID) | 104A |
| Drain to Source Breakdown Voltage | 40V |
| Drain to Source Resistance | 12mR |
| Drain to Source Voltage (Vdss) | 40V |
| Drain-source On Resistance-Max | 8mR |
| Fall Time | 64ns |
| Gate to Source Voltage (Vgs) | 16V |
| Height | 10.54mm |
| Input Capacitance | 3.445nF |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.4W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 167W |
| Rds On Max | 8mR |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Turn-Off Delay Time | 32ns |
| Turn-On Delay Time | 18ns |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRL1104LPBF Datasheet
Download the complete datasheet for International Rectifier IRL1104LPBF to view detailed technical specifications.
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