N-channel MOSFET transistor featuring a 20V Drain to Source Breakdown Voltage and a maximum continuous drain current of 61A. This component offers a low Drain-source On Resistance of 15mR, ideal for efficient power switching. It is housed in a 3-pin TO-220AB package for through-hole mounting and operates within a temperature range of -55°C to 150°C, with a maximum power dissipation of 89W. Key switching characteristics include a turn-on delay time of 10ns and a fall time of 110ns.
International Rectifier IRL3102PBF technical specifications.
| Package/Case | TO-220AB |
| Continuous Drain Current (ID) | 61A |
| Drain to Source Breakdown Voltage | 20V |
| Drain to Source Resistance | 15mR |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 15MR |
| Fall Time | 110ns |
| Gate to Source Voltage (Vgs) | 10V |
| Height | 8.77mm |
| Input Capacitance | 2.5nF |
| Length | 10.54mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 89W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Polarization | N |
| Power Dissipation | 89W |
| Rds On Max | 13mR |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Turn-Off Delay Time | 80ns |
| Turn-On Delay Time | 10ns |
| Width | 4.69mm |
| RoHS | Compliant |
Download the complete datasheet for International Rectifier IRL3102PBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
