N-Channel Power MOSFET, D2PAK package, featuring 30V drain-source breakdown voltage and 64A continuous drain current. Offers a low 12mΩ maximum drain-source on-resistance at a nominal gate-source voltage of 1V. Designed for surface mounting, this silicon metal-oxide semiconductor FET operates from -55°C to 175°C with a maximum power dissipation of 110W. Includes fast switching characteristics with turn-on delay of 8.9ns and fall time of 9.1ns.
PackageD2PAK
Current Rating64A
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
International Rectifier IRL3103SPBF technical specifications.
General
| Package/Case | D2PAK |
| Continuous Drain Current (ID) | 64A |
| Current Rating | 64A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 16mR |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 12MR |
| Fall Time | 9.1ns |
| Gate to Source Voltage (Vgs) | 16V |
| Height | 4.83mm |
| Input Capacitance | 1.65nF |
| Lead Free | Lead Free |
| Length | 10.67mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 94W |
| Mount | Surface Mount |
| Nominal Vgs | 1V |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 110W |
| Rds On Max | 12mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Threshold Voltage | 1V |
| Turn-Off Delay Time | 14ns |
| Turn-On Delay Time | 8.9ns |
| DC Rated Voltage | 30V |
| Width | 9.65mm |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRL3103SPBF Datasheet
Download the complete datasheet for International Rectifier IRL3103SPBF to view detailed technical specifications.
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