N-channel power MOSFET featuring 30V drain-source breakdown voltage and 38A continuous drain current. Offers low on-resistance of 26mΩ at 10Vgs, with a maximum of 40mΩ. Designed for surface mounting in a D2PAK package, this component boasts a maximum power dissipation of 68W and operates across a wide temperature range of -55°C to 175°C. Key switching parameters include a turn-on delay of 7.4ns and a fall time of 36ns.
PackageD2PAK
MountingSurface Mount
PolarityN-CHANNEL
Power68W
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Technical Specifications
International Rectifier IRL3303SPBF technical specifications.
General
| Package/Case | D2PAK |
| Continuous Drain Current (ID) | 38A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 40mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 36ns |
| Gate to Source Voltage (Vgs) | 16V |
| Height | 4.576mm |
| Input Capacitance | 870pF |
| Length | 10.67mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 3.8W |
| Mount | Surface Mount |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 68W |
| Radiation Hardening | No |
| Rds On Max | 26mR |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Turn-Off Delay Time | 14ns |
| Turn-On Delay Time | 7.4ns |
| Width | 9.65mm |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRL3303SPBF Datasheet
Download the complete datasheet for International Rectifier IRL3303SPBF to view detailed technical specifications.
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