
N-Channel Power MOSFET, TO-220AB package, featuring 110A continuous drain current and 20V drain-to-source breakdown voltage. Offers low on-resistance of 8mΩ (typical) and 7mΩ (max) at a 10V gate-source voltage. With a maximum power dissipation of 140W and operating temperature range of -55°C to 150°C, this through-hole component boasts fast switching speeds with turn-on delay of 10ns and fall time of 130ns. Lead-free and RoHS compliant.
International Rectifier IRL3502PBF technical specifications.
| Package/Case | TO-220AB |
| Continuous Drain Current (ID) | 110A |
| Current Rating | 110A |
| Drain to Source Breakdown Voltage | 20V |
| Drain to Source Resistance | 8mR |
| Drain to Source Voltage (Vdss) | 20V |
| Fall Time | 130ns |
| Gate to Source Voltage (Vgs) | 10V |
| Input Capacitance | 4.7nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 140W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 140W |
| Radiation Hardening | No |
| Rds On Max | 7mR |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Turn-Off Delay Time | 96ns |
| Turn-On Delay Time | 10ns |
| DC Rated Voltage | 20V |
| RoHS | Compliant |
Download the complete datasheet for International Rectifier IRL3502PBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
