International Rectifier
IRL3705ZS
Power Field-Effect Transistor, 75A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, D2PAK-3
PackageTO-263-3
Current Rating86A
MountingSurface Mount
Power130W
Quick Jump:
Technical Specifications
International Rectifier IRL3705ZS technical specifications.
General
| Package/Case | TO-263-3 |
| Continuous Drain Current (ID) | 75A |
| Current Rating | 86A |
| Drain to Source Breakdown Voltage | 55V |
| Drain to Source Voltage (Vdss) | 55V |
| Input Capacitance | 2.88nF |
| Lead Free | Contains Lead |
| Max Power Dissipation | 130W |
| Mount | Surface Mount |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Power Dissipation | 130W |
| Rds On Max | 8mR |
| RoHS Compliant | No |
| Series | HEXFET® |
| DC Rated Voltage | 55V |
Compliance
| RoHS | Not Compliant |
Datasheet
International Rectifier IRL3705ZS Datasheet
Download the complete datasheet for International Rectifier IRL3705ZS to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
