
N-channel power MOSFET featuring 20V drain-source breakdown voltage and 50A continuous drain current. Offers low 11mΩ drain-source on-resistance and 7nC gate charge. Designed for through-hole mounting in a TO-220AB package, with a maximum power dissipation of 45W and an operating temperature range of -55°C to 175°C. Includes fast switching characteristics with turn-on delay of 7.1ns and fall time of 4.6ns.
International Rectifier IRL3715ZPBF technical specifications.
| Package/Case | TO-220AB |
| Continuous Drain Current (ID) | 50A |
| Drain to Source Breakdown Voltage | 20V |
| Drain to Source Resistance | 15.5mR |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 11MR |
| Fall Time | 4.6ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 8.77mm |
| Input Capacitance | 870pF |
| Length | 10.54mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 45W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 45W |
| Radiation Hardening | No |
| Rds On Max | 11mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Threshold Voltage | 2.1V |
| Turn-Off Delay Time | 11ns |
| Turn-On Delay Time | 7.1ns |
| Width | 4.69mm |
| RoHS | Compliant |
Download the complete datasheet for International Rectifier IRL3715ZPBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
