N-Channel Power MOSFET, featuring a 100V drain-source voltage and 17A continuous drain current. This silicon Metal-oxide Semiconductor FET offers a low 150mΩ maximum drain-source on-resistance. Designed for surface mounting in a D2PAK package, it operates across a wide temperature range from -55°C to 175°C with a maximum power dissipation of 3.8W. Key switching characteristics include a 7.2ns turn-on delay and 26ns fall time.
PackageD2PAK
Current Rating17A
MountingSurface Mount
Power3.8W
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Technical Specifications
International Rectifier IRL530NSTRRPBF technical specifications.
General
| Package/Case | D2PAK |
| Continuous Drain Current (ID) | 17A |
| Current Rating | 17A |
| Drain to Source Voltage (Vdss) | 100V |
| Drain-source On Resistance-Max | 150mR |
| Fall Time | 26ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 800pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 3.8W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 800 |
| Packaging | Tape and Reel |
| Power Dissipation | 3.8W |
| Radiation Hardening | No |
| Rds On Max | 100mR |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Turn-Off Delay Time | 30ns |
| Turn-On Delay Time | 7.2ns |
| DC Rated Voltage | 100V |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRL530NSTRRPBF Datasheet
Download the complete datasheet for International Rectifier IRL530NSTRRPBF to view detailed technical specifications.
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