N-Channel Power MOSFET, 100V Drain-Source Voltage, 36A Continuous Drain Current, and 0.053 Ohm On-Resistance. Features a 1.8nF input capacitance and 62ns fall time. Designed for surface mounting in a D2PAK-3 (TO-263) package, this silicon Metal-oxide Semiconductor FET operates from -55°C to 175°C with a maximum power dissipation of 3.8W. Lead-free and RoHS compliant.
PackageTO-263
Current Rating36A
MountingSurface Mount
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Technical Specifications
International Rectifier IRL540NSTRLPBF technical specifications.
General
| Package/Case | TO-263 |
| Continuous Drain Current (ID) | 36A |
| Current Rating | 36A |
| Drain to Source Voltage (Vdss) | 100V |
| Fall Time | 62ns |
| Gate to Source Voltage (Vgs) | 16V |
| Height | 4.69mm |
| Input Capacitance | 1.8nF |
| Lead Free | Lead Free |
| Length | 10.54mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 3.8W |
| Mount | Surface Mount |
| Nominal Vgs | 2V |
| Packaging | Tape and Reel |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 39ns |
| Turn-On Delay Time | 11ns |
| DC Rated Voltage | 100V |
| Width | 8.81mm |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRL540NSTRLPBF Datasheet
Download the complete datasheet for International Rectifier IRL540NSTRLPBF to view detailed technical specifications.
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