IRL8113PBF

N-Channel MOSFET, 30V, 105A, 6mR, TO-220AB

N-Channel Power MOSFET, featuring a 30V drain-source breakdown voltage and a maximum continuous drain current of 105A. This silicon Metal-oxide Semiconductor FET offers a low drain-source on-resistance of 6mΩ at a nominal gate-source voltage of 20V. Designed for through-hole mounting in a TO-220AB package, it boasts a maximum power dissipation of 110W and operates across a temperature range of -55°C to 175°C. The component is RoHS compliant and lead-free.

PackageTO-220AB

Current Rating105A

MountingThrough Hole

PolarityN-CHANNEL

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Technical Specifications

International Rectifier IRL8113PBF technical specifications.

General

Package/Case	TO-220AB
Continuous Drain Current (ID)	105A
Current Rating	105A
Drain to Source Breakdown Voltage	30V
Drain to Source Resistance	7.1mR
Drain to Source Voltage (Vdss)	30V
Drain-source On Resistance-Max	6MR
Fall Time	5ns
Gate to Source Voltage (Vgs)	20V
Height	8.77mm
Input Capacitance	2.84nF
Lead Free	Lead Free
Max Operating Temperature	175°C
Min Operating Temperature	-55°C
Max Power Dissipation	110W
Mount	Through Hole
Nominal Vgs	20V
Number of Elements	1
Package Quantity	50
Packaging	Rail/Tube
Polarity	N-CHANNEL
Power Dissipation	110W
Radiation Hardening	No
Rds On Max	6mR
Reach SVHC Compliant	No
RoHS Compliant	Yes
Series	HEXFET®
Threshold Voltage	2.25V
Turn-Off Delay Time	18ns
Turn-On Delay Time	14ns
DC Rated Voltage	30V