N-Channel Power MOSFET, 100V Drain-Source Voltage, 180A Continuous Drain Current, and 4.3mΩ Max On-Resistance. This silicon, metal-oxide semiconductor FET features a TO-220AB package for through-hole mounting. With a maximum power dissipation of 370W and a wide operating temperature range from -55°C to 175°C, it offers efficient switching with turn-on delay of 74ns and turn-off delay of 110ns. The component is RoHS compliant and lead-free.
PackageTO-220AB
MountingThrough Hole
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Technical Specifications
International Rectifier IRLB4030PBF technical specifications.
General
| Package/Case | TO-220AB |
| Continuous Drain Current (ID) | 180A |
| Drain to Source Voltage (Vdss) | 100V |
| Drain-source On Resistance-Max | 4.3MR |
| Dual Supply Voltage | 100V |
| Gate to Source Voltage (Vgs) | 16V |
| Height | 9.02mm |
| Input Capacitance | 11.36nF |
| Lead Free | Lead Free |
| Length | 10.67mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 370W |
| Mount | Through Hole |
| Nominal Vgs | 2.5V |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Termination | Through Hole |
| Turn-Off Delay Time | 110ns |
| Turn-On Delay Time | 74ns |
| Width | 4.83mm |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRLB4030PBF Datasheet
Download the complete datasheet for International Rectifier IRLB4030PBF to view detailed technical specifications.
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