N-Channel Power MOSFET featuring 30V drain-source breakdown voltage and 21A continuous drain current. This silicon Metal-Oxide-Semiconductor FET offers a low 3.5mΩ drain-source resistance at a nominal Vgs of 800mV. Designed for surface mounting, it operates within a temperature range of -55°C to 150°C and boasts fast switching speeds with a 9.1ns turn-on delay and 43ns fall time. The component is housed in a 3.30 x 3.30 MM VQFN package, is halogen-free, and RoHS compliant.
PackageVQFN
MountingSurface Mount
PolarityN-CHANNEL
Power37W
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Technical Specifications
International Rectifier IRLHM630TR2PBF technical specifications.
General
| Package/Case | VQFN |
| Continuous Drain Current (ID) | 21A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 3.5mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 43ns |
| Gate to Source Voltage (Vgs) | 12V |
| Height | 1mm |
| Input Capacitance | 3.17nF |
| Length | 3.3mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.7W |
| Mount | Surface Mount |
| Nominal Vgs | 800mV |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 37W |
| Radiation Hardening | No |
| Rds On Max | 3.5mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Turn-Off Delay Time | 65ns |
| Turn-On Delay Time | 9.1ns |
| Width | 3.3mm |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRLHM630TR2PBF Datasheet
Download the complete datasheet for International Rectifier IRLHM630TR2PBF to view detailed technical specifications.
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