N-channel power MOSFET featuring 30V drain-source voltage and 21A continuous drain current. Offers a low 4.5mΩ maximum drain-source on-resistance. This silicon metal-oxide semiconductor FET is housed in a compact 3.30 x 3.30 MM QFN package for surface mounting. Operates across a wide temperature range from -55°C to 150°C with a maximum power dissipation of 2.7W. Includes fast switching characteristics with a 9.1ns turn-on delay and 65ns turn-off delay. This component is halogen-free and RoHS compliant.
PackageQFN
MountingSurface Mount
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Technical Specifications
International Rectifier IRLHM630TRPBF technical specifications.
General
| Package/Case | QFN |
| Continuous Drain Current (ID) | 21A |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 4.5MR |
| Gate to Source Voltage (Vgs) | 12V |
| Height | 1mm |
| Input Capacitance | 3.17nF |
| Lead Free | Lead Free |
| Length | 3.3mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.7W |
| Mount | Surface Mount |
| Nominal Vgs | 800mV |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HEXFET® Series |
| Threshold Voltage | 800mV |
| Turn-Off Delay Time | 65ns |
| Turn-On Delay Time | 9.1ns |
| Width | 3.3mm |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRLHM630TRPBF Datasheet
Download the complete datasheet for International Rectifier IRLHM630TRPBF to view detailed technical specifications.
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